Topological and magnetic phase transitions in Bi2Se3 thin films with magnetic impurities

When topological insulators meet broken time-reversal symmetry, they bring forth many novel phenomena, such as topological magnetoelectric, half-quantum Hall, and quantum anomalous Hall effects. From the well-known quantum spin Hall state in Bi2Se3 thin films, we predict various topological and magnetic phases when the time-reversal symmetry is broken by magnetic ion doping. As the magnetic ion density increases, the system undergoes successive topological or magnetic phase transitions due to variation of the exchange field and the spin-orbit coupling. In order to identify the topological phases, we vary the spin-orbit coupling strength from zero to the original value of the system and count the number of band crossings between the conduction and valence bands, which directly indicates the change of the topological phase. This method provides a physically intuitive and abstract view to figure out the topological character of each phase and the phase transitions between them.open121

Multiple Dirac fermions from a topological insulator and graphene superlattice

Graphene and three-dimensional topological insulators are well-known Dirac materials whose bulk and surface states are governed by Dirac equations. They not only show good transport properties but also carry various quanta related to the geometrical phase such as charge, spin, and valley Hall conductances. Therefore, it is a great challenge to combine the two Dirac materials together, realizing multiple Dirac fermions. By using first-principles density-functional-theory calculations, we demonstrate such a system built from topological insulator-band insulator-graphene superlattice structures. Hexagonal boron nitride is proposed as an ideal band-insulating material in gluing graphene and topological insulators, providing a good substrate for graphene and a sharp interface with a topological insulator. The power factors for p-type doping are largely enhanced due to the charge-conducting channels through multiple Dirac cones. The systems characterized by the coexistence of the topologically protected interfacial and graphene Dirac cones can pave the way for developing integrated devices for electronics, spintronics and valleytronics applications.open5

Topological insulator phase in halide perovskite structures

Topological insulators are a novel quantum state of matter that reveals their properties and shows exotic phenomena when combined with other phases. Hence, priority has been given to making a good quality topological insulator interface with other compounds. From the applications point of view, the topological insulator phase in perovskite structures could be important to provide the various heterostructure interfaces with multifunctional properties. Here, by performing a tight-binding analysis and first-principles calculations, we predict that cubic-based CsPbI3 and CsSnI3 perovskite compounds under reasonable hydrostatic pressure are feasible candidates for three-dimensional topological insulators. Combined with cubic symmetry, the spin and total angular momentum doublets forming the valence and conduction bands result in a prototype of a continuum model, representing three-dimensional isotropic Dirac fermions, and govern the topological phase transition in halide perovskite materials.close161

Search and design of nonmagnetic centrosymmetric layered crystals with large local spin polarization

Until recently, spin polarization in nonmagnetic materials was the exclusive territory of noncentrosymmetric structures. It was recently shown that a form of "hidden spin polarization" (named the "Rashba-2" or "R-2" effect) could exist in globally centrosymmetric crystals provided the individual layers belong to polar point group symmetries. This realization could considerably broaden the range of materials that might be considered for spin-polarization spintronic applications to include the hitherto "forbidden spintronic compound" that belongs to centrosymmetric symmetries. Here we take the necessary steps to transition from such general, material-agnostic condensed matter theory arguments to material-specific "design principles" that could aid future laboratory search of R-2 materials. Specifically, we (i) classify different prototype layered structures that have been broadly studied in the literature in terms of their expected R-2 behavior, including the Bi2Se3-structure type (a prototype topological insulator), MoS2-structure type (a prototype valleytronic compound), and LaBiOS2-structure type (a host of superconductivity upon doping); (ii) formulate the properties that ideal R-2 compounds should have in terms of combination of their global unit cell symmetries with specific point group symmetries of their constituent "sectors"; and (iii) use first-principles band theory to search for compounds from the prototype family of LaOBiS2-type structures that satisfy these R-2 design metrics. We initially consider both stable and hypothetical M???OMX2 (M': Sc, Y, La, Ce, Pr, Nd, Al, Ga, In, Tl; M: P, As, Sb, Bi; X: S, Se, Te) compounds to establish an understanding of trends of R-2 with composition, and then indicate the predictions that are expected to be stable and synthesizable. We predict large spin splittings (up to ???200meV for holes in LaOBiTe2) as well as surface Rashba states. Experimental testing of such predictions is called for. © 2015 American Physical Society.open0

Emergence of the giant out-of-plane Rashba effect and tunable nanoscale persistent spin helix in ferroelectric SnTe thin films

A non-vanishing electric field inside a non-centrosymmetric crystal transforms into a momentum-dependent magnetic field, namely, a spin???orbit field (SOF). SOFs are of great use in spintronics because they enable spin manipulation via the electric field. At the same time, however, spintronic applications are severely limited by the SOF, as electrons traversing the SOF easily lose their spin information. Here, we propose that in-plane ferroelectricity in (001)-oriented SnTe thin films can support both electrical spin controllability and suppression of spin dephasing. The in-plane ferroelectricity produces a unidirectional out-of-plane Rashba SOF that can host a long-lived helical spin mode known as a persistent spin helix (PSH). Through direct coupling between the inversion asymmetry and the SOF, the ferroelectric switching reverses the out-of-plane Rashba SOF, giving rise to a maximally field-tunable PSH. Furthermore, the giant out-of-plane Rashba SOF seen in the SnTe thin films is linked to the nano-sized PSH, potentially reducing spintronic device sizes to the nanoscale. We combine the two ferroelectric-coupled degrees of freedom, longitudinal charge and transverse PSH, to design intersectional electro-spintronic transistors governed by non-volatile ferroelectric switching within nanoscale lateral and atomic-thick vertical dimensions

Ferroelectricity-Driven Phonon Berry Curvature and Nonlinear Phonon Hall Transports

Berry curvature (BC) governs topological phases of matter and generates anomalous transport. When a magnetic field is applied, phonons can acquire BC indirectly through spin-lattice coupling, leading to a linear phonon Hall effect. Here, we show that polar lattice distortion directly couples to a phonon BC dipole, which causes a switchable nonlinear phonon Hall effect. In a SnS monolayer, the in-plane ferroelectricity induces a phonon BC and leads to the phononic version of the nonvolatile BC memory effect. As a new type of ferroelectricity-phonon coupling, the phonon Rashba effect emerges and opens a mass gap in tilted Weyl phonon modes, resulting in a large phonon BC dipole. Furthermore, our ab initio non-equilibrium molecular dynamics simulations reveal that nonlinear phonon Hall transport occurs in a controllable manner via ferroelectric switching. The ferroelectricity-driven phonon BC and corresponding nonlinear phonon transports provide a novel scheme for constructing topological phononic transport/memory devices

Efficient Solar Cells Employing Light-Harvesting Sb 0.67 Bi 0.33 SI

Sb 1??? x Bi x SI, an isostructural material with the well-known quasi-1D SbSI, possesses good semiconductive and ferroelectric properties but is not applied in solar cells. Herein, solar cells based on alloyed Sb 0.67 Bi 0.33 SI (ASBSI) as a light harvester are fabricated. ASBSI is prepared through the reaction of bismuth triiodide in N,N-dimethylformamide solution with an antimony trisulfide film deposited on a mesoporous (mp)-TiO 2 electrode via chemical bath deposition at 250 ??C under an argon or nitrogen atmosphere; the alloy exhibits a promising bandgap (1.62 eV). The best performing cell fabricated with poly[2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b???]dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] as the hole-transporting layer shows 4.07% in a power conversion efficiency (PCE) under the standard illumination conditions of 100 mW cm ???2 . The unencapsulated cells exhibit good comprehensive stability with retention of 92% of zjr initial PCE under ambient conditions of 60% relative humidity over 360 h, 93% after 1 sun illumination for 1254 min, and 92% after storage at 85 ??C in air for 360 h

Electronic Band Engineering via MI3(M = Sb, Bi) Doping Remarkably Enhances the Air Stability of Perovskite CsSnI3

© 2020 American Chemical Society. CsSnI3 is a representative all-inorganic and less toxic perovskite material. However, extreme structural and chemical instability of perovskite CsSnI3 makes its optoelectronic applications highly challenging. Upon exposure to air and moisture, it immediately undergoes a phase transition to a thermodynamically more stable, but optoelectronically inactive, one-dimensional polymorph near ambient temperature and ultimately deforms into Cs2SnI6. To prohibit this undesirable process, perovskite CsSnI3 has to be stored and treated restrictively in an inert atmosphere and encapsulated hermitically. Here, we demonstrate an unusual strategy to markedly enhance the air stability of perovskite CsSnI3. Namely, MI3 (M = Sb, Bi) doping modifies the electronic band structure of perovskite CsSnI3. As a result, it is remarkable that its heat of formation reduces, being lower than that of its competing polymorph. Accordingly, otherwise thermodynamically unfavorable perovskite CsSnI3 becomes more stable than the latter energetically, thereby preventing the undesirable phase transition. SbI3 (3 mol %)-doped CsSnI3 retains 96% of its perovskite structure, whereas pristine CsSnI3 retains only 12% after 12 h of exposure to air with 45-55% relative humidity. MI3 doping also reduces the energy band gap of perovskite CsSnI3. We employed first-principles density functional theory calculations to explain the origin of the enhanced stability and red-shifted band gaps. Our current work demonstrates that electronic band structure engineering by chemical doping can be an effective means of controlling the phase stability of polymorphs, which are otherwise difficult to stabilize or unattainable. This strategy can be widely applied to materials with low stability but high technological importance11Nsciescopu

Antagonism between Spin-Orbit Coupling and Steric Effects Causes Anomalous Band Gap Evolution in the Perovskite Photovoltaic Materials CH3NH3Sn1-xPbxI3

Halide perovskite solar cells are a recent ground-breaking development achieving power conversion efficiencies exceeding 18%. This has become possible owing to the remarkable properties of the AMX(3) perovskites, which exhibit unique semiconducting properties. The most efficient solar cells utilize the CH3NH3PbI3 perovskite whose band gap, Eg, is 1.55 eV. Even higher efficiencies are anticipated, however, if the band gap of the perovskite can be pushed deeper in the near-infrared region, as in the case of CH3NH3SnI3 (Eg = 1.3 eV). A remarkable way to improve further comes from the CH3NH3Sn,,PbI3 solid solution, which displays an anomalous trend in the evolution of the band gap with the compositions approaching x = 0.5 displaying lower band gaps (E-g approximate to 1.1 eV) than that of the lowest of the end member, CH3NH3SnI3. Here we use firstprinciples calculations to show that the competition between the spin orbit coupling (SOC) and the lattice distortion is responsible for the anomalous behavior of the band gap in CH3NH3Sn1-xPbI3. SOC causes a linear reduction as x increases, while the lattice distortion causes a nonlinear increase due to a composition-induced phase transition near x = 0.5. Our results suggest that electronic structure engineering can have a crucial role in optimizing the photovoltaic performance.close1

Stabilization of Lead-Tin-Alloyed Inorganic-Organic Halide Perovskite Quantum Dots

Recently, lead-tin-based alloyed halide perovskite quantum dots (QDs) with improved stability and less toxicity have been introduced. However, the perovskite QDs containing tin are still unstable and exhibit low photoluminescence quantum yields (PLQYs), owing to the presence of defects in the alloyed system. Here, we have attempted to introduce sulfur anions (S2-) into the host lattice (MAPb(0.75)Sn(0.25)Br(3)) as a promising route to stable alloyed perovskite QDs with improved stability and PLQY. In this study, we used elemental sulfur as a sulfur precursor. The successful incorporation of sulfur anions into the host lattice resulted in a highly improved PLQY (>75% at room temperature), which is believed to be due to a reduction in the defect-related non-radiative recombination centers present in the host lattice. Furthermore, we found that the emission property could be tuned between the bright green and cyan bluish regions without compromising on color quality. This work invigorates the perovskite research community to prepare stable, bright, and color-tunable alloyed inorganic-organic perovskite QDs without compromising on their phases and color quality, which can lead to considerable advances in display technology